VS-30ETH06FP-F3, vs-30eth06fp-n3 www.vishay.com vishay semiconductors revision: 13-may-16 1 document number: 93403 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 30 a fred pt ? features ? reduced q rr and soft recovery ? 175 c t j maximum ? for pfc crm/ccm operation ? fully isolated package (v ins = 2500 v rms ) ? ul e78996 approved ? designed and qualified according to jedec ? -jesd 47 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description / applications state of the art hyperfast recove ry rectifiers designed with optimized performance of forw ard voltage drop, hyperfast recovery time and soft recovery. the planar structure and the platinum doped life time control guarantee the best ov erall performanc e, ruggedness and reliability characteristics. these devices are intended for use in pfc boost stage in the ac/dc section of smps, inverters or as freewheeling diodes. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-220fp i f(av) 30 a v r 600 v v f at i f 1.34 v t rr (typ.) 23 ns t j max. 175 c diode variation single die 3 anode 1 cathode base cathode 2 to-220 full-pak 1 2 3 available absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 37 c 30 a non-repetitive peak surge current i fsm t j = 25 c 220 operating junction and storage temperatures t j , t stg -65 to +175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 30 a - 2.00 2.60 i f = 30 a, t j = 150 c - 1.34 1.75 reverse leakage current i r v r = v r rated - 0.3 50 a t j = 150 c, v r = v r rated - 60 500 junction capacitance c t v r = 600 v - 33 - pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh
VS-30ETH06FP-F3, vs-30eth06fp-n3 www.vishay.com vishay semiconductors revision: 13-may-16 2 document number: 93403 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 50 a/s, v r = 30 v - 28 35 ns i f = 1 a, di f /dt = 100 a/s, v r = 30 v - 23 30 t j = 25 c i f = 30 a di f /dt = 200 a/s v r = 200 v -31- t j = 125 c - 77 - peak recovery current i rrm t j = 25 c - 3.5 - a t j = 125 c - 7.7 - reverse recovery charge q rr t j = 25 c - 65 - nc t j = 125 c - 345 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units maximum junction and storage temperature range t j , t stg -65 - 175 c thermal resistance, junction to case per leg r thjc - - 2.85 c/w thermal resistance, junction to ambient per leg r thja typical socket mount - - 70 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.2- weight -2-g -0.07- oz. mounting torque 6 (5) - 12 (10) kgf cm (lbf in) marking device case style to-220 full-pak 30eth06fp
VS-30ETH06FP-F3, vs-30eth06fp-n3 www.vishay.com vishay semiconductors revision: 13-may-16 3 document number: 93403 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 175 c t j = 150 c t j = 25 c 1000 0 3.5 1.5 1 2.5 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 0.5 2 3 0.01 0.1 1 10 100 0200400 v r - reverse voltage (v) i r - reverse current (ma) 300 t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 25 c 100 0.001 1000 600 500 0.0001 100 1000 0 200 400 500 600 10 v r - reverse voltage (v) c t - junction capacitance (pf) 300 100 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 100 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 s ingle pul s e (thermal re s i s tance)
VS-30ETH06FP-F3, vs-30eth06fp-n3 www.vishay.com vishay semiconductors revision: 13-may-16 4 document number: 93403 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r allowable case temperature (c) i f(av) - average forward current (a) 20 15 10 530 25 35 0 80 160 180 0 40 60 120 140 100 20 sq uare wave (d = 0.50) rated v r applied s ee note (1) dc 0 1020304045 average power loss (w) i f(av) - average forward current (a) 0 10 30 40 50 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 20 rms limit 5152535 60 70 80 90 0 i f = 30 a i f = 15 a 10 0 0 0 1 0 0 1 t rr (ns) di f /dt (a/s) 40 60 80 90 30 50 70 v r = 200 v t j = 125 c t j = 25 c 0 20 0 0 0 1 0 0 1 q rr (nc) di f /dt (a/s) 600 1000 1200 400 800 v r = 200 v t j = 125 c t j = 25 c 0 200 i f = 30 a i f = 15 a
VS-30ETH06FP-F3, vs-30eth06fp-n3 www.vishay.com vishay semiconductors revision: 13-may-16 5 document number: 93403 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery waveform and definitions ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-30ETH06FP-F3 50 1000 anti static plastic tube vs-30eth06fp-n3 50 1000 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95005 part marking information www.vishay.com/doc?95440 q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr 2 - current rating (30 a) 3 - e = single diode 4 - t = to-220 5 - h = hyperfast recovery 6 - voltage rating (06 = 600 v) 7 - full-pak 1 - vishay semiconductors product device code 5 1 3 2 4 6 7 8 vs- 30 e t h 06 fp -f3 8 -f3 = rohs-compliant and totally lead (pb)-free - environmental digit: -n3 = halogen-free, rohs-compliant and totally lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95005 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 3.3 3.1 5 0.5 0.9 0.7 2.54 typ. 2.54 typ. 10.6 10.4 3.7 3.2 7.31 6.91 0.61 0.38 2.85 2.65 2.8 2.6 1.4 1.3 10 4.8 4.6 16.0 15.8 16.4 15.4 (2 places) r 0.7 r 0.5 hole ? 3.4 3.1 typ. 1.15 1.05 13.56 13.05 lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220 full-pak
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